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Typical Performance Characteristics
2. T C = 25 C
Figure 1. On-Region Characteristics
100
*Notes:
1. 250 μ s Pulse Test
o
Figure 2. Transfer Characteristics
100
150 C
-55 C
25 C
10
1
V GS = 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
10
o
o
o
*Notes:
1. V DS = 20V
0.1
0.3
1
V DS ,Drain-Source Voltage[V]
10
1
2
3
2. 250 μ s Pulse Test
4 5 6 7
V GS ,Gate-Source Voltage[V]
8
150 C
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.4
0.3
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
o
25 C
0.2
V GS = 10V
V GS = 20V
10
o
*Notes:
*Note: T C = 25 C
0.1
0
10
20 30 40 50
o
60
1
0.0
1. V GS = 0V
2. 250 μ s Pulse Test
0.5 1.0
1.5
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
V SD , Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
1E5
10000
C oss
C iss
Ciss = Cgs + Cgd ( Cds = shorted )
Coss = Cds + Cgd
Crss = Cgd
10
8
V DS = 120V
V DS = 300V
V DS = 480V
1000
100
C rss
6
4
10
*Note:
1. V GS = 0V
2
1
0.1
2. f = 1MHz
1 10 100
600
0
0
*Note: I D = 11A
10 20 30 40
50
V DS , Drain-Source Voltage [V]
Q g , Total Gate Charge [nC]
?2009 Fairchild Semiconductor Corporation
FCP22N60N / FCPF22N60NT Rev. C1
3
www.fairchildsemi.com
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